View UPA2755GR_1331777.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2755GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 m MAX. (VGS = 4.5 V, ID = 4.0 A) * Low Ciss: Ciss = 650 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
PA2755GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 8.0 32 1.7 2.0 150 -55 to +150 8 6.4
V V A A W W C C A mJ
Gate Protection Diode Source Gate Body Diode Drain
EQUIVALENT CIRCUIT (1/2 circuit)
Total Power Dissipation (1 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Total Power Dissipation (2 units)
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 2000 mm2 x 2.2 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16639EJ1V0DS00 (1st edition) Date Published November 2003 NS CP(K) Printed in Japan
2003
PA2755GR
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 18 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 4.0 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 2.8 5.7 14 21 650 150 98 12 16 38 8.0
2.5
Drain to Source On-state Resistance
18 29
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 24 V VGS = 10 V ID = 8.0 A IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A/s
13 2.2 3.8 0.84 17 8.2
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G16639EJ1V0DS
PA2755GR
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - %
120 100 80 60 40 20 0
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 2 units 1 unit Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1 00
ID(pulse) PW = 100 s
ID - Drain Current - A
1 0
ID(DC)
1
RDS(on) Limit ed (at VGS = 10 V) Power Dissipation Limited
1 ms 10 ms
100 ms
0.1
M ount ed on ceramic subst rat e of 2000 mm2 x 2.2mm, 1 unit TA = 25C Single pulse
DC
0.01 0.01 0.1 1 1 0 1 00
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 73.5C/W
10
1 Mounted on ceramic substrate of 2000 mm2 x 2.2 mm Single pulse, 1 unit TA = 25C 0.1
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16639EJ1V0DS
3
PA2755GR
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
40 Pulsed 35
FORWARD TRANSFER CHARACTERISTICS
1 00 VDS = 1 V 0 P ulsed 1 0
ID - Drain Current - A
30 25
VGS = 10 V 4.5 V
ID - Drain Current - A
1
TA = 1 50C 75C 25C -40C
20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1 0.01 0.001 0.0001 0 1 2 3 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
3
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
1 0 VDS = 1 V 0 P ulsed
VGS(off) - Gate Cut-off Voltage - V
2.5
VDS = 1 V 0 ID = 1mA
2 1 .5 1
1 TA = -40C 25C 75C 1 50C 0.1
0.5 0 -50 -25 0 25 50 75 1 00 1 25 1 50 1 75
0.01 0.01 0.1
D
1
1 0
1 00
Tch - Channel Temperature - C
I - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
50 VGS = 10 V Pulsed 40
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
60 Pulsed
40
30 VGS = 4.5 V 20 10 V
20
8.0 A ID = 4.0 A
10
0 1 10 100
0 0 5 10 15 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G16639EJ1V0DS
PA2755GR
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 175 10 V ID = 4.0 A Pulsed VGS = 4.5 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
1000 Ciss
100
Coss Crss
10 0.1 1 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 1 5
VDS - Drain to Source Voltage - V
25 20 VDD = 24 V 1V 5 6V 1 0
100 td(off) tr 10 tf td(on)
1 5
1 0 VGS 5 VDS
5
1 0.1 1 10 100
0 0 2 4 6 8 1 0 1 2 1 4
0
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000 VGS = 0 V di/dt = 100 A/s
10
4.5 V
0V
trr - Reverse Recovery Time - ns
VGS = 10 V
IF - Diode Forward Current - A
100
1
10
0.1
Pulsed 0.01 0 0.5 1 1.5
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet G16639EJ1V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 15 V VGS = 10 V RG = 10
ID = 8.0 A
PA2755GR
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
120 RG = 25 VDD = 15 V VGS = 20 0V IAS 8 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
RG = 25 VDD = 15 V VGS = 20 0V Starting Tch = 25C
100 80 60 40 20 0 25 50 75
10
IAS = 8 A
EAS = 6.4 mJ
1 10
100
1m
100 m
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet G16639EJ1V0DS
PA2755GR
* The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

▲Up To Search▲

Price & Availability of UPA2755GR

	To Download UPA2755GR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .